A (4x2) reconstruction of CuInSe{sub 2} (001) studied by low-energy electron diffraction and soft x-ray photoemission spectroscopy
- ISAS-Institute for Analytical Sciences, Albert-Einstein-Strasse 9, 12489 Berlin-Adlershof (Germany)
Clean and flat (001) surfaces of CuInSe{sub 2}/GaAs grown by molecular-beam epitaxy could be prepared by the combination of a Se capping and decapping process and subsequent Ar{sup +} ion sputtering and annealing. The formation of a (4x2) reconstruction was observed with low-energy electron diffraction. Soft x-ray photoemission spectroscopy was performed on the prepared surfaces and revealed surface core-level binding energy shifts in the Cu 2p{sub 3/2}, Se 3d, and In 4d levels which are associated with surface atoms. The structure model of a combined metal adatom-Se dimer structure is proposed to refer to the (4x2) reconstruction.
- OSTI ID:
- 20778663
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 5; Other Information: DOI: 10.1063/1.2162677; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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