c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind

Link, M; Schreiter, M; Weber, J; Gabl, R; Pitzer, D; Primig, R; Wersing, W; Assouar, M B; Elmazria, O

doi:10.1116/1.2165658

Title: c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind

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Abstract

This article reports on the growth and characterization of polycrystalline ZnO films having c axis inclined up to 16 deg. with respect to the substrate normal. These films allow the excitation of shear and longitudinal waves with comparable electromechanical coupling constants and are of significant interest for thin film bulk acoustic resonators (FBARs). The films are deposited on silicon substrates covered by Al{sub 2}O{sub 3} and SiO{sub 2} buffer layers under low pressure using a modified reactive dc-pulsed magnetron sputtering system. A blind has been positioned between target and substrate, allowing oblique particle incidence without tilting the wafer. The study of structural properties of the deposited ZnO films by x-ray diffraction and scanning electron microscopy has permitted to show the presence of the inclined structure. Electromechanical coupling constants K up to 13% have been extracted for shear-mode excitation using highly overmoded FBARs.

Authors:

Link, M; Schreiter, M; Weber, J; Gabl, R; Pitzer, D; Primig, R; Wersing, W; Assouar, M B; Elmazria, O ^[1]

Siemens AG, Corporate Technology, Otto-Hahn-Ring 6, 81739 Munich (Germany)

Publication Date:: Wed Mar 15 00:00:00 EST 2006

OSTI Identifier:: 20777041

Resource Type:: Journal Article

Journal Name:: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

Additional Journal Information:: Journal Volume: 24; Journal Issue: 2; Other Information: DOI: 10.1116/1.2165658; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTAL GROWTH; DEPOSITION; LAYERS; PIEZOELECTRICITY; POLYCRYSTALS; RESONATORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SHEAR; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSDUCERS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats


                    Link, M, Schreiter, M, Weber, J, Gabl, R, Pitzer, D, Primig, R, Wersing, W, Assouar, M B, Elmazria, O, and Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite Henri Poincare, 54506 Nancy. c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind.  United States: N. p., 2006. 
        Web.  doi:10.1116/1.2165658.

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                    Link, M, Schreiter, M, Weber, J, Gabl, R, Pitzer, D, Primig, R, Wersing, W, Assouar, M B, Elmazria, O, & Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite Henri Poincare, 54506 Nancy. c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind.  United States.  https://doi.org/10.1116/1.2165658

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                    Link, M, Schreiter, M, Weber, J, Gabl, R, Pitzer, D, Primig, R, Wersing, W, Assouar, M B, Elmazria, O, and Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite Henri Poincare, 54506 Nancy. 2006.  
        "c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind".  United States.  https://doi.org/10.1116/1.2165658.

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@article{osti_20777041,

  title        = {c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind},

  author       = {Link, M and Schreiter, M and Weber, J and Gabl, R and Pitzer, D and Primig, R and Wersing, W and Assouar, M B and Elmazria, O and Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite Henri Poincare, 54506 Nancy},

  abstractNote = {This article reports on the growth and characterization of polycrystalline ZnO films having c axis inclined up to 16 deg. with respect to the substrate normal. These films allow the excitation of shear and longitudinal waves with comparable electromechanical coupling constants and are of significant interest for thin film bulk acoustic resonators (FBARs). The films are deposited on silicon substrates covered by Al{sub 2}O{sub 3} and SiO{sub 2} buffer layers under low pressure using a modified reactive dc-pulsed magnetron sputtering system. A blind has been positioned between target and substrate, allowing oblique particle incidence without tilting the wafer. The study of structural properties of the deposited ZnO films by x-ray diffraction and scanning electron microscopy has permitted to show the presence of the inclined structure. Electromechanical coupling constants K up to 13% have been extracted for shear-mode excitation using highly overmoded FBARs.},

  doi          = {10.1116/1.2165658},

  url          = {https://www.osti.gov/biblio/20777041},
  journal      = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},

  issn         = {1553-1813},

  number       = 2,

  volume       = 24,

  place        = {United States},

  year         = {Wed Mar 15 00:00:00 EST 2006},

  month        = {Wed Mar 15 00:00:00 EST 2006}

}

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