Thermal stability and atomic ordering of epitaxial Heusler alloy Co{sub 2}FeSi films grown on GaAs(001)

Journal Article · Tue Nov 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2136213· OSTI ID:20719811

Hashimoto, M; Herfort, J; Schoenherr, H -P; Ploog, K H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

The thermal stability and the atomic ordering of single-crystal Heusler alloy Co{sub 2}FeSi layers grown by molecular beam epitaxy on GaAs(001) have been studied. We found that the Co{sub 2}FeSi layers have a long-range atomic order and crystallize in a partly disordered L2{sub 1} structure in the low growth temperature (T{sub G}) regime. The long-range atomic order of the layers is further improved with increasing T{sub G} up to 350 deg. C. However, the increase of T{sub G} induces an interfacial reaction between the Co{sub 2}FeSi layer and the GaAs substrate. The analysis of the in-plane magnetic anisotropy reveals that the interface perfection is improved up to T{sub G}=200 deg. C and deteriorated due to an interfacial reaction above 200 deg. C.

• OSTI ID: 20719811
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 10; Other Information: DOI: 10.1063/1.2136213; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
COBALT ALLOYS
CRYSTAL GROWTH
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
HEUSLER ALLOYS
INTERFACES
IRON ALLOYS
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SILICON ALLOYS
STABILITY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TERNARY ALLOY SYSTEMS
THIN FILMS