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Title: Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

Abstract

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

Authors:
; ; ; ; ; ; ; ; ; ;  [1]
  1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)
Publication Date:
OSTI Identifier:
20719661
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1063/1.2115095; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; EV RANGE 01-10; FRENKEL DEFECTS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; MEV RANGE 01-10; PHOSPHORUS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS

Citation Formats

Lee, H S, Yamaguchi, M, Ekins-Daukes, N J, Khan, A, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imaizumi, M, Ohshima, T, Itoh, H, University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells. United States: N. p., 2005. Web. doi:10.1063/1.2115095.
Lee, H S, Yamaguchi, M, Ekins-Daukes, N J, Khan, A, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imaizumi, M, Ohshima, T, Itoh, H, University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, & Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells. United States. https://doi.org/10.1063/1.2115095
Lee, H S, Yamaguchi, M, Ekins-Daukes, N J, Khan, A, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imaizumi, M, Ohshima, T, Itoh, H, University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. 2005. "Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells". United States. https://doi.org/10.1063/1.2115095.
@article{osti_20719661,
title = {Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells},
author = {Lee, H S and Yamaguchi, M and Ekins-Daukes, N J and Khan, A and Takamoto, T and Agui, T and Kamimura, K and Kaneiwa, M and Imaizumi, M and Ohshima, T and Itoh, H and University of Sydney, School of Physics, New South Wales 2006 and University of South Alabama, Mobile, Alabama 36688 and Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198 and Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292},
abstractNote = {Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.},
doi = {10.1063/1.2115095},
url = {https://www.osti.gov/biblio/20719661}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 98,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}