skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic Layer Deposition - Process Models and Metrologies

Abstract

We report on the status of a combined experimental and modeling study for atomic layer deposition (ALD) of HfO2 and Al2O3. Hafnium oxide films were deposited from tetrakis(dimethylamino)hafnium and water. Aluminum oxide films from trimethyl aluminum and water are being studied through simulations. In this work, both in situ metrologies and process models are being developed. Optically-accessible ALD reactors have been constructed for in situ, high-sensitivity Raman and infrared absorption spectroscopic measurements to monitor gas phase and surface species. A numerical model using computational fluid dynamics codes has been developed to simulate the gas flow and temperature profiles in the experimental reactor. Detailed chemical kinetic models are being developed with assistance from quantum chemical calculations to explore reaction pathways and energetics. This chemistry is then incorporated into the overall reactor models.

Authors:
; ; ; ; ; ;  [1]
  1. National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-8360 (United States)
Publication Date:
OSTI Identifier:
20719257
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 788; Journal Issue: 1; Conference: 2005 international conference on characterization and metrology for ULSI technology, Richardson, TX (United States), 15-18 Mar 2005; Other Information: DOI: 10.1063/1.2062952; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTROSCOPY; ALUMINIUM; ALUMINIUM OXIDES; DEPOSITION; EPITAXY; EXPERIMENTAL REACTORS; FLUID MECHANICS; GAS FLOW; HAFNIUM OXIDES; INFRARED SPECTRA; RAMAN SPECTROSCOPY; THIN FILMS; WATER

Citation Formats

Burgess, Jr, D R, Maslar, J E, Hurst, W S, Moore, E F, Kimes, W A, Fink, R R, and Nguyen, N V. Atomic Layer Deposition - Process Models and Metrologies. United States: N. p., 2005. Web. doi:10.1063/1.2062952.
Burgess, Jr, D R, Maslar, J E, Hurst, W S, Moore, E F, Kimes, W A, Fink, R R, & Nguyen, N V. Atomic Layer Deposition - Process Models and Metrologies. United States. https://doi.org/10.1063/1.2062952
Burgess, Jr, D R, Maslar, J E, Hurst, W S, Moore, E F, Kimes, W A, Fink, R R, and Nguyen, N V. 2005. "Atomic Layer Deposition - Process Models and Metrologies". United States. https://doi.org/10.1063/1.2062952.
@article{osti_20719257,
title = {Atomic Layer Deposition - Process Models and Metrologies},
author = {Burgess, Jr, D R and Maslar, J E and Hurst, W S and Moore, E F and Kimes, W A and Fink, R R and Nguyen, N V},
abstractNote = {We report on the status of a combined experimental and modeling study for atomic layer deposition (ALD) of HfO2 and Al2O3. Hafnium oxide films were deposited from tetrakis(dimethylamino)hafnium and water. Aluminum oxide films from trimethyl aluminum and water are being studied through simulations. In this work, both in situ metrologies and process models are being developed. Optically-accessible ALD reactors have been constructed for in situ, high-sensitivity Raman and infrared absorption spectroscopic measurements to monitor gas phase and surface species. A numerical model using computational fluid dynamics codes has been developed to simulate the gas flow and temperature profiles in the experimental reactor. Detailed chemical kinetic models are being developed with assistance from quantum chemical calculations to explore reaction pathways and energetics. This chemistry is then incorporated into the overall reactor models.},
doi = {10.1063/1.2062952},
url = {https://www.osti.gov/biblio/20719257}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 788,
place = {United States},
year = {Fri Sep 09 00:00:00 EDT 2005},
month = {Fri Sep 09 00:00:00 EDT 2005}
}