Optical Properties of p-type ZnO Doped by As Ion Implantation

Journal Article · Thu Jun 30 00:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1994064· OSTI ID:20719087

Jeong, T S; Youn, C J; Han, M S ^[1]; Park, Y S ^[2]; Lee, W S ^[3]

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1. Semiconductor Physics Research Center (SPRC), Jeonbuk National University, Jeonju 561-756 (Korea, Republic of)
2. Korea Photonics Technolgy Institute (KOPTI), Gwangju 500-210 (Korea, Republic of)
3. Department of Electrical Engineering, Chosun University, Gangju 501-759 (Korea, Republic of)

As-doped p-type ZnO has been achieved by ion implantation. The As-related optical properties were analyzed by using secondary ion mass spectrometry, the Raman scattering, and the photoluminescence experiments. From the I-V measurement, the behavior of rectifying on these samples is confirmed.

• OSTI ID: 20719087
• Journal Information: AIP Conference Proceedings, Vol. 772, Issue 1; Conference: ICPS-27: 27. international conference on the physics of semiconductors, Flagstaff, AZ (United States), 26-30 Jul 2004; Other Information: DOI: 10.1063/1.1994064; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC IONS
DOPED MATERIALS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
THIN FILMS
ZINC OXIDES