Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam
Abstract
Positron annihilation was used to probe vacancy-type defects in electroplated Cu films deposited on Ta/SiO{sub 2}/Si. Doppler broadening spectra of the annihilation radiation were measured for the Cu films during grain growth at room temperature (i.e., self-annealing). The line-shape parameter S increased during self-annealing, and the observed time dependence of S was well described by the Johnson-Mehl-Avrami-Kolmogorov kinetics. After self-annealing, the values of S were found to be larger than the S value for annealed pure Cu, suggesting that the positrons annihilated from the trapped state by vacancy-type defects in grains. From a comparison with the results of previous isochronal annealing experiments, the major species of defects introduced during self-annealing was found to be vacancy clusters. The size of these defects increased, but their concentration decreased, with increasing film thickness. In thicker Cu films, an enhanced flow of atoms and subsequent rapid grain growth cause such defect behavior.
- Authors:
-
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
- Publication Date:
- OSTI Identifier:
- 20714055
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 98; Journal Issue: 4; Other Information: DOI: 10.1063/1.2009813; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; COPPER; DOPPLER BROADENING; ELECTRODEPOSITED COATINGS; ELECTROPLATING; GRAIN GROWTH; POSITRON BEAMS; POSITRONS; RECRYSTALLIZATION; SILICON; SILICON OXIDES; TANTALUM; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS; TIME DEPENDENCE; TRAPPING; VACANCIES
Citation Formats
Uedono, A, Suzuki, T, Nakamura, T, Ohdaira, T, Suzuki, R, Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama, Kanagawa 222-0033, and National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam. United States: N. p., 2005.
Web. doi:10.1063/1.2009813.
Uedono, A, Suzuki, T, Nakamura, T, Ohdaira, T, Suzuki, R, Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama, Kanagawa 222-0033, & National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam. United States. https://doi.org/10.1063/1.2009813
Uedono, A, Suzuki, T, Nakamura, T, Ohdaira, T, Suzuki, R, Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama, Kanagawa 222-0033, and National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. 2005.
"Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam". United States. https://doi.org/10.1063/1.2009813.
@article{osti_20714055,
title = {Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam},
author = {Uedono, A and Suzuki, T and Nakamura, T and Ohdaira, T and Suzuki, R and Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama, Kanagawa 222-0033 and National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568},
abstractNote = {Positron annihilation was used to probe vacancy-type defects in electroplated Cu films deposited on Ta/SiO{sub 2}/Si. Doppler broadening spectra of the annihilation radiation were measured for the Cu films during grain growth at room temperature (i.e., self-annealing). The line-shape parameter S increased during self-annealing, and the observed time dependence of S was well described by the Johnson-Mehl-Avrami-Kolmogorov kinetics. After self-annealing, the values of S were found to be larger than the S value for annealed pure Cu, suggesting that the positrons annihilated from the trapped state by vacancy-type defects in grains. From a comparison with the results of previous isochronal annealing experiments, the major species of defects introduced during self-annealing was found to be vacancy clusters. The size of these defects increased, but their concentration decreased, with increasing film thickness. In thicker Cu films, an enhanced flow of atoms and subsequent rapid grain growth cause such defect behavior.},
doi = {10.1063/1.2009813},
url = {https://www.osti.gov/biblio/20714055},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 98,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2005},
month = {Mon Aug 15 00:00:00 EDT 2005}
}