Ultrahigh-speed etching of organic films using microwave-excited nonequilibrium atmospheric-pressure plasma

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2030409· OSTI ID:20714053

Yamakawa, Koji; Hori, Masaru; Goto, Toshio; Den, Shoji; Katagiri, Toshirou; Kano, Hiroyuki ^[1]

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1. Department of Quantum Engineering, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya 464-8603 (Japan)

An ultrahigh etch rate (24 {mu}m/min at 155 deg. C and 0.3 mm/min at 325 deg. C) of an organic film was successfully achieved using a microwave-excited nonequilibrium atmospheric-pressure plasma source employing He and O{sub 2} gases. This has the potential to be applied to various kinds of fabrication of structures for microelectromechanical systems and bionanotechnology. A stable glow discharge was realized between the narrow gap (200 {mu}m) electrodes covered with a dielectric film in atmospheric pressure. The etching characteristics were investigated by changing the O{sub 2} flow rate and the distance of the substrate from the electrode. In order to clarify the ultrahigh etching mechanism, in situ diagnostic methods, including two-dimensional imaging of optical emissions in the plasma with an intensified charge-coupled device camera, electron-density evaluation using the Stark-broadened profile of the hydrogen Balmer beta line in optical emission spectroscopy, and two dimensional spatial distribution of ozone density measured with ultraviolet absorption spectroscopy, have been performed. It was found that O atoms were the dominant etching species for ultrahigh-speed etching of the organic film, and the effect of ozone on the etching process was negligible.

• OSTI ID: 20714053
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 4; Other Information: DOI: 10.1063/1.2030409; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ABSORPTION SPECTROSCOPY
ATMOSPHERIC PRESSURE
CHARGE-COUPLED DEVICES
ELECTRODES
ELECTRON DENSITY
EMISSION SPECTROSCOPY
ETCHING
FLOW RATE
GLOW DISCHARGES
HELIUM
HYDROGEN
MICROWAVE RADIATION
ORGANIC COMPOUNDS
OZONE
PLASMA
PLASMA DENSITY
PLASMA DIAGNOSTICS
SPATIAL DISTRIBUTION
THIN FILMS
ULTRAVIOLET RADIATION