Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films
- Laboratoire de Physique de la Matiere Condensee et Nanostructures, Unite Mixte de Recherche (UMR). 5586 Centre National de la Recherche Scientifique (CNRS), Universite Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France)
Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si{sub 1-x}Ge{sub x}:H. Studies of space-charge-limited currents and space-charge relaxation allow to get information on midgap states originating from Ge. It is observed that the electron-capture cross section of states at the Fermi level increases linearly with their concentration. This is supported by modulated photocurrent experiments. Finally, it is shown that the variations of both the Ge dangling bond concentration and their electron-capture cross section with Ge content account for the photoresponse in these materials.
- OSTI ID:
- 20714022
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 3; Other Information: DOI: 10.1063/1.1999831; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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