Phase-separated Al-Si thin films
- Leading-Edge Technology Development Headquarters, Canon Inc. 5-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0193 (Japan)
Phase-separated Al-Si films composed of Al nanocylinders embedded in an amorphous-Si matrix have been prepared by a sputtering method. By controlling the deposition rate, substrate temperature, and film composition, the average diameter of the Al cylinders can be varied systematically from less than 5 to 13 nm with a cylinder density ranging from 10{sup 15} to in excess of 10{sup 16} cylinders m{sup -2}. A three-dimensional simulation of phase separation in binary thin films was performed using a modified Cahn-Hilliard [J. Chem. Phys. 28, 258 (1958)] equation to understand the growth mechanism. The simulation studies indicate that the surface diffusion length and film composition are important factors which determine film morphology. Experimental and simulation studies are compared and discussed.
- OSTI ID:
- 20714013
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 3; Other Information: DOI: 10.1063/1.1994942; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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