Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Journal Article · Wed Jun 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1921339· OSTI ID:20711731

Dyakonova, N; Teppe, F; Lusakowski, J; Knap, W; Levinshtein, M; Dmitriev, A P; Shur, M S; Bollaert, S; Cappy, A ^[1]

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1. Groupe d'Etude des Semiconducteurs (GES)-Unite Mixte de Recherche (UMR) 5650 Centre National de la Recherche Scientifique CNRS - Universite Montpellier 2, 34900 Montpellier (France)

The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.

• OSTI ID: 20711731
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 11; Other Information: DOI: 10.1063/1.1921339; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRIC POTENTIAL
ELECTRON MOBILITY
EXCITATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
SEMICONDUCTOR MATERIALS
TRANSISTORS