Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

Journal Article · Mon Oct 03 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2077835· OSTI ID:20709823

Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori ^[1]

---

1. Toyota Central Research and Development Laboratories, Incorporated, 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer.

• OSTI ID: 20709823
• Journal Information: Applied Physics Letters, Vol. 87, Issue 14; Other Information: DOI: 10.1063/1.2077835; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
DEPOSITION
ELECTRIC POTENTIAL
ELECTRODES
HYDROXIDES
INDIUM COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
OXIDATION
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
TIN OXIDES
X-RAY PHOTOELECTRON SPECTROSCOPY