Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates

Journal Article · Mon Sep 26 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2061870· OSTI ID:20709812

Zhong, Z; Schmidt, O G; Bauer, G ^[1]

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1. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart (Germany)

Site-controlled groups of Ge islands are grown on pit-patterned Si (001) substrates. By varying the deposited amount of Ge, we find that the growth starts with the formation of a single island at the pit bottom and then proceeds to the formation of a highly symmetric Ge island group around the pit top. A bimodal size distribution of dome-shaped islands at the bottom and at the top corners of the pits is observed. A growth mechanism is proposed to qualitatively explain these phenomena. Our experiments help to promote a further understanding of Ge island growth on patterned substrates.

• OSTI ID: 20709812
• Journal Information: Applied Physics Letters, Vol. 87, Issue 13; Other Information: DOI: 10.1063/1.2061870; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GERMANIUM
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES