B activation enhancement in submicron confined implants in Si
- MATIS-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)
We implanted 3 keV B ions into a crystalline Si film, grown by molecular-beam epitaxy and masked by SiO{sub 2} stripes with opening widths ranging from 3.2 {mu}m down to 0.38 {mu}m. Thermal anneals were performed at 800 deg. C for several times. By quantitative high-resolution scanning capacitance microscopy, we demonstrated that the electrical reactivation of inactive B after postimplant annealing is obtained at faster rates as the window width decreases. Total electrical activation is gained first in the narrowest window, with times shorter by nearly a factor of 4 compared to the widest one. In addition, since inactive B seems to be caused by B clustering induced by implantation, our results put in evidence a strong effect of implantation confinement also on B clusters dissolution mechanism. These results have a strong impact on the modern silicon-based device engineering.
- OSTI ID:
- 20709811
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 13; Other Information: DOI: 10.1063/1.2061867; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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