Mechanism of tantalum adhesion on SiLK{sup TM}
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
Tantalum adhesion on SiLK{sup TM} was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK{sup TM}. In addition, the degradation effects of H{sub 2}/He reactive plasma clean on Ta adhesion on SiLK{sup TM} was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK{sup TM} with Cu up to seven metal layers.
- OSTI ID:
- 20709794
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 12; Other Information: DOI: 10.1063/1.2051792; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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