Single standing carbon nanotube array in gate holes using a silicon nitride cap layer
- Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)
We studied the growth of a single standing carbon nanotube (CNT) which was grown by plasma-enhanced chemical vapor deposition in the gate hole formed by conventional photolithography in the silicon nitride. The number of CNT per hole increases with increasing the gate hole diameter and a single CNT could be grown in a 3 {mu}m hole. A single standing CNT in a gate hole exhibited the turn-on field of 1.6 V/{mu}m and the current density of 16 {mu}A at 3.3 V/{mu}m. The emission currents follow the Fowler-Nordheim equation with a field enhancement factor of 1.14x10{sup 7}.
- OSTI ID:
- 20706492
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 24; Other Information: DOI: 10.1063/1.2142079; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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