Ion blistering of boron-doped silicon: The critical role of defect passivation
Abstract
The microscopic mechanism of hydrogen ion blistering of silicon was investigated using Raman scattering spectroscopy and thermal desorption spectrometry. The data in B-doped Si({approx}10{sup -3}/{omega} cm) are particularly worth noting, since B doping at this level strongly reduces both the ion dose and the thermal budget required for blistering. In that case the Si-H stretch mode is found to be shifted markedly towards higher frequencies characteristic of highly passivated vacancies and internal surfaces. It is deduced that the degree of defect passivation is a most critical factor for blistering.
- Authors:
-
- INRS-EMT, Universite du Quebec, 1650 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)
- Publication Date:
- OSTI Identifier:
- 20706465
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 23; Other Information: DOI: 10.1063/1.2139845; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON; CRYSTALS; DESORPTION; DOPED MATERIALS; HYDROGEN IONS; ION BEAMS; PASSIVATION; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SURFACES; VACANCIES
Citation Formats
Desrosiers, N, Giguere, A, Moutanabbir, O, and Terreault, B. Ion blistering of boron-doped silicon: The critical role of defect passivation. United States: N. p., 2005.
Web. doi:10.1063/1.2139845.
Desrosiers, N, Giguere, A, Moutanabbir, O, & Terreault, B. Ion blistering of boron-doped silicon: The critical role of defect passivation. United States. https://doi.org/10.1063/1.2139845
Desrosiers, N, Giguere, A, Moutanabbir, O, and Terreault, B. 2005.
"Ion blistering of boron-doped silicon: The critical role of defect passivation". United States. https://doi.org/10.1063/1.2139845.
@article{osti_20706465,
title = {Ion blistering of boron-doped silicon: The critical role of defect passivation},
author = {Desrosiers, N and Giguere, A and Moutanabbir, O and Terreault, B},
abstractNote = {The microscopic mechanism of hydrogen ion blistering of silicon was investigated using Raman scattering spectroscopy and thermal desorption spectrometry. The data in B-doped Si({approx}10{sup -3}/{omega} cm) are particularly worth noting, since B doping at this level strongly reduces both the ion dose and the thermal budget required for blistering. In that case the Si-H stretch mode is found to be shifted markedly towards higher frequencies characteristic of highly passivated vacancies and internal surfaces. It is deduced that the degree of defect passivation is a most critical factor for blistering.},
doi = {10.1063/1.2139845},
url = {https://www.osti.gov/biblio/20706465},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 87,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}
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