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Title: GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Abstract

Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
20706463
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 23; Other Information: DOI: 10.1063/1.2140614; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY COMPOUNDS; CAVITY RESONATORS; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASER CAVITIES; LASER MIRRORS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT

Citation Formats

Niu, Z C, Zhang, S Y, Ni, H Q, Wu, D H, Zhao, H, Peng, H L, Xu, Y Q, Li, S Y, He, Z H, Ren, Z W, Han, Q, Yang, X H, Du, Y, Wu, R H, and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States: N. p., 2005. Web. doi:10.1063/1.2140614.
Niu, Z C, Zhang, S Y, Ni, H Q, Wu, D H, Zhao, H, Peng, H L, Xu, Y Q, Li, S Y, He, Z H, Ren, Z W, Han, Q, Yang, X H, Du, Y, Wu, R H, & State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States. https://doi.org/10.1063/1.2140614
Niu, Z C, Zhang, S Y, Ni, H Q, Wu, D H, Zhao, H, Peng, H L, Xu, Y Q, Li, S Y, He, Z H, Ren, Z W, Han, Q, Yang, X H, Du, Y, Wu, R H, and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. 2005. "GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy". United States. https://doi.org/10.1063/1.2140614.
@article{osti_20706463,
title = {GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy},
author = {Niu, Z C and Zhang, S Y and Ni, H Q and Wu, D H and Zhao, H and Peng, H L and Xu, Y Q and Li, S Y and He, Z H and Ren, Z W and Han, Q and Yang, X H and Du, Y and Wu, R H and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083},
abstractNote = {Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.},
doi = {10.1063/1.2140614},
url = {https://www.osti.gov/biblio/20706463}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 87,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}