Deep-level emissions influenced by O and Zn implantations in ZnO
Abstract
A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10{sup 17}/cm{sup 3} and 5x10{sup 19}/cm{sup 3}. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V{sub Zn} is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10{sup 19}/cm{sup 3} implantation concentration. The novel emission is tentatively identified as O-antisite O{sub Zn}.
- Authors:
-
- Physical Electronics and Photonics, Department of Physics, Goeteborg University, SE-412 96 Goeteborg (Sweden)
- Publication Date:
- OSTI Identifier:
- 20706430
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 21; Other Information: DOI: 10.1063/1.2135880; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; EV RANGE 01-10; HEAT TREATMENTS; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTRA; TEMPERATURE RANGE 0065-0273 K; ZINC OXIDES
Citation Formats
Zhao, Q X, Klason, P, Willander, M, Zhong, H M, Lu, W, Yang, J H, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, and Institute of Condensed State Physics, Jilin Normal University, SiPing, Jilin 136000. Deep-level emissions influenced by O and Zn implantations in ZnO. United States: N. p., 2005.
Web. doi:10.1063/1.2135880.
Zhao, Q X, Klason, P, Willander, M, Zhong, H M, Lu, W, Yang, J H, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, & Institute of Condensed State Physics, Jilin Normal University, SiPing, Jilin 136000. Deep-level emissions influenced by O and Zn implantations in ZnO. United States. https://doi.org/10.1063/1.2135880
Zhao, Q X, Klason, P, Willander, M, Zhong, H M, Lu, W, Yang, J H, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, and Institute of Condensed State Physics, Jilin Normal University, SiPing, Jilin 136000. 2005.
"Deep-level emissions influenced by O and Zn implantations in ZnO". United States. https://doi.org/10.1063/1.2135880.
@article{osti_20706430,
title = {Deep-level emissions influenced by O and Zn implantations in ZnO},
author = {Zhao, Q X and Klason, P and Willander, M and Zhong, H M and Lu, W and Yang, J H and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 and Institute of Condensed State Physics, Jilin Normal University, SiPing, Jilin 136000},
abstractNote = {A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10{sup 17}/cm{sup 3} and 5x10{sup 19}/cm{sup 3}. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V{sub Zn} is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10{sup 19}/cm{sup 3} implantation concentration. The novel emission is tentatively identified as O-antisite O{sub Zn}.},
doi = {10.1063/1.2135880},
url = {https://www.osti.gov/biblio/20706430},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 87,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2005},
month = {Mon Nov 21 00:00:00 EST 2005}
}