Effect of native defects on optical properties of In{sub x}Ga{sub 1-x}N alloys

Journal Article · Mon Oct 17 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2108118· OSTI ID:20706375

Li, S X; Haller, E E; Yu, K M; Walukiewicz, W; Ager, III, J W; Wu, J; Shan, W; Hai, Lu; Schaff, William J ^[1]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)

The energy position of the optical-absorption edge and the free-carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high-energy {sup 4}He{sup +} irradiation. The blueshift of the absorption edge after irradiation in In-rich material (x>0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical-absorption measurements show that the irradiation-introduced native defects are inside the band gap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical-absorption edge and the carrier populations in In{sub x}Ga{sub 1-x}N are in excellent agreement with the predictions of the amphoteric defect model.

• OSTI ID: 20706375
• Journal Information: Applied Physics Letters, Vol. 87, Issue 16; Other Information: DOI: 10.1063/1.2108118; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
CRYSTAL DEFECTS
ENERGY GAP
EPITAXY
GALLIUM ALLOYS
INDIUM ALLOYS
ION BEAMS
IRRADIATION
LAYERS
NITROGEN ADDITIONS
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TERNARY ALLOY SYSTEMS