Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O{sub 3} films on BaPbO{sub 3} electrode using Ru conducting barrier

Journal Article · Mon Jul 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1996850· OSTI ID:20702574

Liang, C -S; Wu, J -M ^[1]

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1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

Highly non-(001)-oriented Pb(Zr,Ti)O{sub 3} (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO{sub 3} (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films.

• OSTI ID: 20702574
• Journal Information: Applied Physics Letters, Vol. 87, Issue 2; Other Information: DOI: 10.1063/1.1996850; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CRYSTAL GROWTH
DEPOSITION
DIFFUSION
ELECTRODES
FATIGUE
GRAIN ORIENTATION
LAYERS
OXYGEN
PLATINUM
PZT
RANDOMNESS
RUTHENIUM
SPUTTERING
TEXTURE
THIN FILMS