Effects of post-deposition annealing in O{sub 2} on the electrical characteristics of LaAlO{sub 3} films on Si

Journal Article · Mon Jul 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1989447· OSTI ID:20702573

Miotti, L; Bastos, K P; Driemeier, C; Edon, V; Hugon, M C; Agius, B; Baumvol, I J.R. ^[1]

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1. Instituto de Fisica, Universidade Federal do Rio Grande do Sul, CP 15051, 91501-970 Porto Alegre, RS (Brazil)

LaAlO{sub 3} films were deposited on p-type Si(100) by sputtering from a LaAlO{sub 3} target. CxV characteristics were determined in nonannealed and O{sub 2}-annealed capacitors having LaAlO{sub 3} films as dielectric and RuO{sub 2} as top electrode. Thermal annealing in O{sub 2} atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. {sup 16}O-{sup 18}O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O{sub 2} were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface.

• OSTI ID: 20702573
• Journal Information: Applied Physics Letters, Vol. 87, Issue 2; Other Information: DOI: 10.1063/1.1989447; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
ANNEALING
CHEMICAL ANALYSIS
CRYSTALS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRODES
ISOTOPIC EXCHANGE
LANTHANUM COMPOUNDS
OXYGEN
OXYGEN 16
OXYGEN 18
RUTHENIUM OXIDES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SPUTTERING
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY