Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

Journal Article · Mon Jul 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1994954· OSTI ID:20702566

Semond, F; Sellers, I R; Natali, F; Byrne, D; Leroux, M; Massies, J; Ollier, N; Leymarie, J; Disseix, P; Vasson, A ^[1]

---

1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Rue Bernard Gregory, 06560 Valbonne (France)

The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K-300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 A thick aluminium layer as the top mirror. Active layer thicknesses of {lambda}/2, {lambda}, or 3{lambda}/2 were investigated. The samples with GaN thicknesses {lambda}/2 and {lambda} display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.

• OSTI ID: 20702566
• Journal Information: Applied Physics Letters, Vol. 87, Issue 2; Other Information: DOI: 10.1063/1.1994954; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
BUFFERS
CRYSTAL GROWTH
EXCITONS
GALLIUM NITRIDES
LAYERS
MEV RANGE 10-100
MIRRORS
MOLECULAR BEAM EPITAXY
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS