Effects of postgrowth rapid thermal annealing on InAlAs/InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs/InGaAlAs buffer

Journal Article · Mon Jul 25 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1988983· OSTI ID:20702511

Ihn, Soo-Ghang; Jo, Seong-June; Song, Jong-In ^[1]

---

1. Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

Effects of postgrowth rapid thermal annealing (RTA) on structural and electrical properties of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.52}Ga{sub 0.48}As metamorphic high-electron-mobility transistor (MHEMT) structure grown on a GaAs substrate utilizing a compositionally graded InAlAs/InGaAlAs buffer layer were investigated. High-resolution triple-axis x-ray diffraction, photoluminescence, and van der Pauw-Hall measurements were used for the investigation. While the RTA improved the structural property of the MHEMT, it degraded the channel mobility of the MHEMT due to defect-assisted impurity redistribution.

• OSTI ID: 20702511
• Journal Information: Applied Physics Letters, Vol. 87, Issue 4; Other Information: DOI: 10.1063/1.1988983; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANNEALING
BUFFERS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GALLIUM ARSENIDES
HALL EFFECT
IMPURITIES
INDIUM COMPOUNDS
LAYERS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TRANSISTORS
X-RAY DIFFRACTION