High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates

Journal Article · Mon Apr 18 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1900949· OSTI ID:20702367

Manfra, M J; Pfeiffer, L N; West, K W; Picciotto, R de; Baldwin, K W ^[1]

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1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10{sup 11} cm{sup -2}, a mobility of 10{sup 6} cm{sup 2}/Vs is achieved. At fixed carrier density p=10{sup 11} cm{sup -2}, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10{sup 6} cm{sup 2}/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only {approx}10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier density of 3.6x10{sup 10} cm{sup -2}, a mobility of 800 000 cm{sup 2}/Vs is achieved at T=15 mK.

• OSTI ID: 20702367
• Journal Information: Applied Physics Letters, Vol. 86, Issue 16; Other Information: DOI: 10.1063/1.1900949; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ANISOTROPY
CARBON
CARRIER DENSITY
CRYSTAL GROWTH
DOPED MATERIALS
FILAMENTS
GALLIUM ARSENIDES
HALL EFFECT
HOLE MOBILITY
HOLES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0000-0013 K
TWO-DIMENSIONAL CALCULATIONS
VISIBLE RADIATION