Growth of ferromagnetic semiconductor Ge{sub 1-x}Mn{sub x}Te films on BaF{sub 2} (111) by ionized cluster beam deposition

Journal Article · Fri Apr 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1865341· OSTI ID:20668284

Fukuma, Y; Arifuku, M; Asada, H; Koyanagi, T ^[1]

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1. Yamaguchi Prefectural Industrial Technology Institute, 4-1 Asutopia, Ube 755-0195 (Japan)

IV-VI ferromagnetic semiconductor Ge{sub 1-x}Mn{sub x}Te (x{approx_equal}0.4) films were grown on BaF{sub 2} (111) substrates by an ionized cluster beam method. In neutral cluster beam deposition, Ge{sub 0.64}Mn{sub 0.36}Te films grown at substrate temperatures in the range from 250 to 300 deg. C show an epitaxial relationship Ge{sub 0.64}Mn{sub 0.36}Te/GeTe(111)parallel BaF{sub 2}(111). The crystallinity of the Ge{sub 0.64}Mn{sub 0.36}Te layer is improved with increasing substrate temperature. Further improvements of the crystal properties such as the crystallinity and the surface smoothness are accomplished by the proper acceleration of the ionized GeTe cluster, although the acceleration of the ionized MnTe cluster hardly gives rise to any noticeable improvement of the crystalline quality. The crystalline quality significantly affects the ferromagnetism: the enhancement of the spontaneous magnetization and the decrease of the coercive field are observed for the film grown using the ionized GeTe cluster at the acceleration voltage of 1 kV due to the decreases of magnetic disorder caused by inhomogeneities in Mn distribution and pinning sites of domain-wall motion.

• OSTI ID: 20668284
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 7; Other Information: DOI: 10.1063/1.1865341; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM FLUORIDES
CLUSTER BEAMS
COERCIVE FORCE
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
EPITAXY
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GERMANIUM TELLURIDES
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE TELLURIDES
MOLECULAR CLUSTERS
MORPHOLOGY
ROUGHNESS
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS