Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

Journal Article · Fri Apr 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1871334· OSTI ID:20668279

Xie, S Y; Yoon, S F; Wang, S Z ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, 42 Nanyang Avenue, Singapore 639798 (Singapore)

We report the effects of ex situ thermal annealing on the deep-level defects and the minority-carrier electron diffusion length in Be-doped, p-type In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} grown by solid source molecular-beam epitaxy. Deep-level transient spectroscopy measurements reveal two majority-carrier hole traps, HT1 (0.18 eV) and HT4 (0.59 eV), and two minority-carrier electron traps, ET1 (0.09 eV) and ET3 (0.41 eV), in the as-grown sample. For the sample with postgrowth thermal annealing, the overall deep-level defect-concentration is decreased. Two hole traps, HT2 (0.39 eV) and HT3 (0.41 eV), and one electron trap, ET2 (0.19 eV), are observed. We found that the minority-carrier electron diffusion length increases by {approx}30% and the leakage current of the InGaAsN/GaAs p-n junction decreases by 2-3 orders after thermal annealing. An increase of the net acceptor concentration after annealing is also observed and can be explained by a recently proposed three-center-complex model.

• OSTI ID: 20668279
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 7; Other Information: DOI: 10.1063/1.1871334; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BERYLLIUM
CARRIER LIFETIME
CHARGE CARRIERS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION LENGTH
DOPED MATERIALS
ELECTRONS
GALLIUM ARSENIDES
HOLES
IMPURITIES
INDIUM ARSENIDES
LAYERS
LEAKAGE CURRENT
MILLI EV RANGE
MOLECULAR BEAM EPITAXY
NITROGEN ADDITIONS
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS