Ion-irradiation-induced stresses and swelling in amorphous Ge thin films
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- I. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)
- Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Mechanical stresses and morphology during growth and ion bombardment of amorphous Ge thin films are investigated by a combination of in situ stress measurements and molecular dynamics computer simulations. Strong compressive stresses are generated during irradiation that subsequently lead to severe swelling. The simulations indicate that interstitial-mediated viscous flow in combination with well-localized vacancy defects are the main ingredients responsible for the observed phenomena.
- OSTI ID:
- 20666297
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 13; Other Information: DOI: 10.1103/PhysRevB.71.134102; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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