Cd{sup 2+}/NH{sub 3}-treatment of Cu(In,Ga)(S,Se){sub 2}: Impact on the properties of ZnO layers deposited by the ion layer gas reaction method

Journal Article · Sat Jan 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1820000· OSTI ID:20664979

Baer, M; Bloeck, U; Muffler, H -J; Lux-Steiner, M C; Fischer, Ch -H; Giersig, M; Niesen, T P; Karg, F ^[1]

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1. Hahn-Meitner Institut Berlin, Solarenergieforschung SE2, Glienicker Strasse 100, D-14109 Berlin (Germany)

Cu(In,Ga)(S,Se){sub 2}- (''CIGSSe'') based solar cells with a ZnO layer deposited by the ion layer gas reaction (ILGAR) method yield superior efficiencies (15.0%) than the references with a chemical bath-deposited CdS buffer (14.1%). However, this high performance is only reached if the absorber is pretreated in a Cd{sup 2+}- and aqueous ammonia-containing bath prior to the ILGAR-ZnO deposition. The photovoltaic as well as the dark device parameters are strongly influenced by this treatment. Scanning and transmission electron microscopy (TEM) as well as x-ray diffraction measurements reveal a different morphology and structure of ILGAR-ZnO layers on top of Cd{sup 2+}/NH{sub 3}-treated and on as-deposited absorbers, indicating a considerably modified absorber surface. By energy dispersive x-ray analysis in the TEM, Cd could only be identified at the ILGAR-ZnO/Cd{sup 2+}/NH{sub 3}-treated-CIGSSe interface of the respective cross sections, if the absorber was treated in a bath with an atypically high Cd{sup 2+}-concentration. In this case a Cd-containing thin layer between ZnO and CIGSSe was observed in TEM images.

• OSTI ID: 20664979
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 1; Other Information: DOI: 10.1063/1.1820000; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CADMIUM IONS
CADMIUM SULFIDES
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
CROSS SECTIONS
GALLIUM SELENIDES
GALLIUM SULFIDES
INDIUM SELENIDES
INDIUM SULFIDES
INTERFACES
MORPHOLOGY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SURFACE TREATMENTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES