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Title: Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Abstract

The lack of a shallow donor in diamond with reasonable room temperature conductivity has been a major obstacle, until now, for the realization of many diamond based electronic devices. Most recently it has been shown that exposure of p-type (B doped) homoepitaxial diamond layers to a deuterium plasma can result in the formation of n-type diamond with a shallow donor state (E{sub a}=0.34 eV) and high room temperature mobility (430 cm{sup 2}/V s) [Z. Teukam et al., Nat. Mater. 2, 482 (2003); C. Saguy et al., Diamond Relat. Mater. 13, 700 (2004)]. Experimental results, based on the comparison of secondary ion mass spectrometry profiles of B and D and Hall effect measurements at different temperatures are presented. They confirm the previous speculation that some deuterium related complex is responsible for the donor activity in diamond. These donors are shown to be formed in a two-step process. First, deuterium diffuses into the entire B containing layer rather slowly, being trapped by the boron acceptors and passivating them. Once all B have formed complexes, further exposure to a D plasma results in the formation of a layer that contains about twice as many D atoms as the B content. This step ismore » the one that gives rise to the excellent n-type features observed. The most recent theoretical attempts to explain the donor state by simulations of various boron-hydrogen complexes in diamond are reviewed.« less

Authors:
; ; ; ; ; ; ; ; ; ;  [1]
  1. Physics Department, Solid State Institute, Technion, Haifa 32000 (Israel)
Publication Date:
OSTI Identifier:
20662205
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 96; Journal Issue: 12; Other Information: DOI: 10.1063/1.1811777; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CARRIER DENSITY; COMPARATIVE EVALUATIONS; DEUTERIUM; DIAMONDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; EPITAXY; HALL EFFECT; HYDROGEN COMPLEXES; IMPURITIES; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; PLASMA; SEMICONDUCTOR MATERIALS; SIMULATION; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Kalish, R, Saguy, C, Cytermann, C, Chevallier, J, Teukam, Z, Jomard, F, Kociniewski, T, Ballutaud, D, Butler, J E, Baron, C, Deneuville, A, Laboratoire de Physique des Solides et de Cristallogenese, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, Naval Research Laboratory, Code 6174, Washington, DC 20375, and Laboratoire d'Etudes des Proprietes Electroniques des Solides, CNRS, Boite Postale 166, 38042 Grenoble Cedex 09. Conversion of p-type to n-type diamond by exposure to a deuterium plasma. United States: N. p., 2004. Web. doi:10.1063/1.1811777.
Kalish, R, Saguy, C, Cytermann, C, Chevallier, J, Teukam, Z, Jomard, F, Kociniewski, T, Ballutaud, D, Butler, J E, Baron, C, Deneuville, A, Laboratoire de Physique des Solides et de Cristallogenese, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, Naval Research Laboratory, Code 6174, Washington, DC 20375, & Laboratoire d'Etudes des Proprietes Electroniques des Solides, CNRS, Boite Postale 166, 38042 Grenoble Cedex 09. Conversion of p-type to n-type diamond by exposure to a deuterium plasma. United States. https://doi.org/10.1063/1.1811777
Kalish, R, Saguy, C, Cytermann, C, Chevallier, J, Teukam, Z, Jomard, F, Kociniewski, T, Ballutaud, D, Butler, J E, Baron, C, Deneuville, A, Laboratoire de Physique des Solides et de Cristallogenese, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, Naval Research Laboratory, Code 6174, Washington, DC 20375, and Laboratoire d'Etudes des Proprietes Electroniques des Solides, CNRS, Boite Postale 166, 38042 Grenoble Cedex 09. 2004. "Conversion of p-type to n-type diamond by exposure to a deuterium plasma". United States. https://doi.org/10.1063/1.1811777.
@article{osti_20662205,
title = {Conversion of p-type to n-type diamond by exposure to a deuterium plasma},
author = {Kalish, R and Saguy, C and Cytermann, C and Chevallier, J and Teukam, Z and Jomard, F and Kociniewski, T and Ballutaud, D and Butler, J E and Baron, C and Deneuville, A and Laboratoire de Physique des Solides et de Cristallogenese, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex and Naval Research Laboratory, Code 6174, Washington, DC 20375 and Laboratoire d'Etudes des Proprietes Electroniques des Solides, CNRS, Boite Postale 166, 38042 Grenoble Cedex 09},
abstractNote = {The lack of a shallow donor in diamond with reasonable room temperature conductivity has been a major obstacle, until now, for the realization of many diamond based electronic devices. Most recently it has been shown that exposure of p-type (B doped) homoepitaxial diamond layers to a deuterium plasma can result in the formation of n-type diamond with a shallow donor state (E{sub a}=0.34 eV) and high room temperature mobility (430 cm{sup 2}/V s) [Z. Teukam et al., Nat. Mater. 2, 482 (2003); C. Saguy et al., Diamond Relat. Mater. 13, 700 (2004)]. Experimental results, based on the comparison of secondary ion mass spectrometry profiles of B and D and Hall effect measurements at different temperatures are presented. They confirm the previous speculation that some deuterium related complex is responsible for the donor activity in diamond. These donors are shown to be formed in a two-step process. First, deuterium diffuses into the entire B containing layer rather slowly, being trapped by the boron acceptors and passivating them. Once all B have formed complexes, further exposure to a D plasma results in the formation of a layer that contains about twice as many D atoms as the B content. This step is the one that gives rise to the excellent n-type features observed. The most recent theoretical attempts to explain the donor state by simulations of various boron-hydrogen complexes in diamond are reviewed.},
doi = {10.1063/1.1811777},
url = {https://www.osti.gov/biblio/20662205}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 96,
place = {United States},
year = {Wed Dec 15 00:00:00 EST 2004},
month = {Wed Dec 15 00:00:00 EST 2004}
}