Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Journal Article · Mon Nov 01 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1803615· OSTI ID:20662139

Barba, D; Aimez, V; Beauvais, J; Beerens, J; Drouin, D; Chicoine, M; Schiettekatte, F ^[1]

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1. Departement de Genie Electrique et de Genie Informatique, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the As outgassing mechanism and the disordering effects induced by ion implantation in Zn-doped GaAs with nominal doping level p=7x10{sup 18} cm{sup -3}. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450 deg. C, or after ion implantations carried out at energies of 40 keV with P{sup +}, and at 90 and 170 keV with As{sup +}. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from As desorption is clearly observed in samples submitted to RVTA above 300 deg. C, and the depletion layer depths measured in ion implanted GaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45 deg. during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100 nm in GaAs-based materials.

• OSTI ID: 20662139
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 9; Other Information: DOI: 10.1063/1.1803615; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COMPUTERIZED SIMULATION
DEGASSING
DEPLETION LAYER
DESORPTION
DOPED MATERIALS
GALLIUM ARSENIDES
ION CHANNELING
ION IMPLANTATION
KEV RANGE 10-100
KEV RANGE 100-1000
MONTE CARLO METHOD
PHONONS
PHOSPHORUS IONS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K
ZINC IONS