Nonpolar a-plane p-type GaN and p-n Junction Diodes

Journal Article · Fri Oct 15 00:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1790065· OSTI ID:20662118

Chakraborty, Arpan; Xing, H; Craven, M D; Keller, S; Mates, T; Speck, J S; Baars, S.P. den; Mishra, U K ^[1]

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1. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106 (United States)

Growth and electrical characteristics of Mg-doped p-type nonpolar (1120) a-plane GaN films, grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the growth temperature. The electrical conductivity of the films exhibited a strong dependence on the growth parameters. Secondary-ion-mass-spectroscopy measurements indicated that more Mg was incorporated at higher growth rate and at lower growth temperatures. The Mg concentration in the films increased linearly with the Mg flow. A maximum hole concentration of 6.8x10{sup 17}cm{sup -3} was achieved at room temperature for a Mg concentration of 7.6x10{sup 19}cm{sup -3}, corresponding to 0.9% ionization. Further increase in the Mg concentration resulted in increased surface roughness as well as a significant decrease in the hole concentration. p-n junction diodes were fabricated using nonpolar a-plane GaN, and the current-voltage characteristics of these diodes showed a sharp turn-on at {approx}3 V.

• OSTI ID: 20662118
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 8; Other Information: DOI: 10.1063/1.1790065; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
HOLES
ION MICROPROBE ANALYSIS
IONIZATION
MAGNESIUM
MASS SPECTROSCOPY
MORPHOLOGY
P-N JUNCTIONS
ROUGHNESS
SAPPHIRE
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS