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Title: Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method

Abstract

After stoichiometric LiNbO{sub 3} thick films were deposited on z-cut LiNbO{sub 3} substrates using the sol-gel method from a precursor solution containing various polyvinyl alcohol (PVA) concentrations, their characteristics were investigated. The film thickness increased linearly with the increase in PVA and precursor concentrations. The orientation relationships between films and substrates were determined by x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and the results showed that (006) oriented LiNbO{sub 3} epitaxial layers with parallel epitaxial relationships could be grown on a z-cut LiNbO{sub 3} substrate. The refractive indexes of the films were n{sub 0}=2.28{+-}0.02 and n{sub e}=2.19{+-}0.02 at a wavelength of 632.8 nm, and their transmission loss was 0.50{+-}0.04 dB/cm.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Department of Applied Chemistry, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501 (Japan)
Publication Date:
OSTI Identifier:
20658105
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 96; Journal Issue: 11; Other Information: DOI: 10.1063/1.1789634; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EPITAXY; FILMS; GRAIN ORIENTATION; LAYERS; LITHIUM COMPOUNDS; NIOBATES; PRECURSOR; PVA; RAMAN SPECTRA; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SOL-GEL PROCESS; SOLUTIONS; STOICHIOMETRY; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA; WAVELENGTHS; X-RAY DIFFRACTION

Citation Formats

Takahashi, Makoto, Otowa, Ryouhei, Mori, Hidekazu, Sato, Shoji, Nishiwaki, Akira, Wakita, Koichi, Ohnishi, Naoyuki, Yagi, Touru, Uchida, Tetsuo, Department of Electronic Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Department of Mechanical Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Yamaju Ceramic Co., Ltd., 971 Anada, Seto, Aichi 489-0003, and Department of Applied Chemistry, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555. Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method. United States: N. p., 2004. Web. doi:10.1063/1.1789634.
Takahashi, Makoto, Otowa, Ryouhei, Mori, Hidekazu, Sato, Shoji, Nishiwaki, Akira, Wakita, Koichi, Ohnishi, Naoyuki, Yagi, Touru, Uchida, Tetsuo, Department of Electronic Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Department of Mechanical Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Yamaju Ceramic Co., Ltd., 971 Anada, Seto, Aichi 489-0003, & Department of Applied Chemistry, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555. Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method. United States. https://doi.org/10.1063/1.1789634
Takahashi, Makoto, Otowa, Ryouhei, Mori, Hidekazu, Sato, Shoji, Nishiwaki, Akira, Wakita, Koichi, Ohnishi, Naoyuki, Yagi, Touru, Uchida, Tetsuo, Department of Electronic Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Department of Mechanical Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501, Yamaju Ceramic Co., Ltd., 971 Anada, Seto, Aichi 489-0003, and Department of Applied Chemistry, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555. 2004. "Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method". United States. https://doi.org/10.1063/1.1789634.
@article{osti_20658105,
title = {Epitaxial growth and characterization of stoichiometric LiNbO{sub 3} films prepared by the sol-gel method},
author = {Takahashi, Makoto and Otowa, Ryouhei and Mori, Hidekazu and Sato, Shoji and Nishiwaki, Akira and Wakita, Koichi and Ohnishi, Naoyuki and Yagi, Touru and Uchida, Tetsuo and Department of Electronic Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501 and Department of Mechanical Engineering, College of Engineering, Chubu University, Matsumoto-cho 1200, Kasugai, Aichi 487-8501 and Yamaju Ceramic Co., Ltd., 971 Anada, Seto, Aichi 489-0003 and Department of Applied Chemistry, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555},
abstractNote = {After stoichiometric LiNbO{sub 3} thick films were deposited on z-cut LiNbO{sub 3} substrates using the sol-gel method from a precursor solution containing various polyvinyl alcohol (PVA) concentrations, their characteristics were investigated. The film thickness increased linearly with the increase in PVA and precursor concentrations. The orientation relationships between films and substrates were determined by x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and the results showed that (006) oriented LiNbO{sub 3} epitaxial layers with parallel epitaxial relationships could be grown on a z-cut LiNbO{sub 3} substrate. The refractive indexes of the films were n{sub 0}=2.28{+-}0.02 and n{sub e}=2.19{+-}0.02 at a wavelength of 632.8 nm, and their transmission loss was 0.50{+-}0.04 dB/cm.},
doi = {10.1063/1.1789634},
url = {https://www.osti.gov/biblio/20658105}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 96,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 2004},
month = {Wed Dec 01 00:00:00 EST 2004}
}