In situ and real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction
- Department of Physics, University of Paderborn, D-33098 Paderborn (Germany)
We present an x-ray diffractometer for the analysis of epitaxial layers during (in situ) metal-organic chemical vapor deposition (MOCVD). Our diffractometer has a conventional x-ray source, does not need a goniometer stage, and is not sensitive to precise adjustment of the samples before measurement. It allows us to perform measurements within a few seconds even from rotating and wobbling samples. The first results of laboratory tests performed with our x-ray diffraction system show that it is well suited for in situ and real-time monitoring of the MOCVD growth process. We were able to measure the growth rate of a cubic GaN layer and the intensity and peak position of Bragg reflections of the growing layer in less than 20 s only.
- OSTI ID:
- 20644115
- Journal Information:
- Review of Scientific Instruments, Vol. 76, Issue 3; Other Information: DOI: 10.1063/1.1857277; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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