Suppression of hydrogen diffusion at the hydrogen-induced platelets in p-type Czochralski silicon

Journal Article · Mon Mar 28 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1896443· OSTI ID:20637042

Huang, Y L; Ma, Y; Job, R; Fahrner, W R ^[1]

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1. Chair of Electronic Devices, University of Hagen, Haldener Strasse 182, D-58084 Hagen (Germany)

Hydrogen diffusion in p-type Czochralski silicon is investigated by combined Raman spectroscope, scanning electron microscope, and spreading resistance probe measurements. Exposure of silicon wafers to rf hydrogen plasma results in the formation of platelets. The increase of hydrogenation duration leads to the growth of the platelets and the reduction of the hydrogen diffusivity. The large platelets grow faster than the small ones. The growth of the platelets is based on the capture of hydrogen. The dependence of the hydrogen diffusivity upon the average size of the platelets suggests that the indiffusion of hydrogen is suppressed by the platelets.

• OSTI ID: 20637042
• Journal Information: Applied Physics Letters, Vol. 86, Issue 13; Other Information: DOI: 10.1063/1.1896443; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
CAPTURE
CRYSTAL GROWTH
DIFFUSION
HYDROGEN
PLASMA
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON