Combination of time of flight direct recoiled spectroscopy and ion scattering trajectory simulations of (Ga,Mn)N growth by chemical beam epitaxy
- Texas Center for Superconductivity and Advanced Materials, University of Houston, Houston, Texas 77204-5004 (United States)
In situ direct recoiled spectroscopy combined with scattering-recoiling trajectory simulations were applied to characterization of (Ga,Mn)N thin films grown by chemical beam epitaxy. Relative intensities of the scattering and recoiling signals recorded as a function of the sample azimuthal rotation allowed determination of the surface composition and periodicity. Models locating the Mn atoms at Ga sites and interstitial positions and the presence of N vacancies at percent levels were simulated. We find that most Mn atoms are located at Ga sites with a nonnegligible level going to interstitial positions; inclusion of N vacancies is also necessary to duplicate some experimental features. This agrees with the samples free carrier concentrations and photoluminescence measurements.
- OSTI ID:
- 20636927
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 2; Other Information: DOI: 10.1063/1.1841478; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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