High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-3211 (United States)
Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5-15 and 20-50 cm{sup 2} V{sup -1} s{sup -1} are obtained for devices post-deposition annealed at 300 and 600 deg. C, respectively. TTFTs processed at 300 and 600 deg. C yield devices with turn-on voltage of 0-15 and -5-5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10{sup 7} is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n-1)d{sup 10} ns{sup 0} (n{>=}4) electronic configurations.
- OSTI ID:
- 20636814
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 1; Other Information: DOI: 10.1063/1.1843286; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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