Electron-irradiation enhanced photoluminescence from GaInNAs/GaAs quantum wells subject to thermal annealing

Journal Article · Mon Dec 20 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1834997· OSTI ID:20634568

Pavelescu, E -M; Gheorghiu, A; Dumitrescu, M; Tukiainen, A; Jouhti, T; Hakkarainen, T; Kudrawiec, R; Andrzejewski, J; Misiewicz, J; Tkachenko, N; Dhaka, V D.S.; Lemmetyinen, H; Pessa, M ^[1]

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1. Optoelectronics Research Centre, P.O. Box 692, and Institute of Materials Chemistry, P.O. Box 541, Tampere University of Technology, 33101 Tampere (Finland)

Electron irradiation of a 1.3-{mu}m-GaInNAs/GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradiated sample also causes a small additional spectral blueshift and reduces alloy potential energy fluctuations at the conduction band minimum. These irradiation-related phenomena are accompanied by small but discernable changes in x-ray diffraction features upon annealing, which indicate compositional and/or structural changes in the quantum wells.

• OSTI ID: 20634568
• Journal Information: Applied Physics Letters, Vol. 85, Issue 25; Other Information: DOI: 10.1063/1.1834997; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRON BEAMS
FLUCTUATIONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM NITRIDES
IRRADIATION
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POTENTIAL ENERGY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
X-RAY DIFFRACTION