Electron mobility exceeding 160 000 cm{sup 2}/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Journal Article · Mon Nov 29 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1824176· OSTI ID:20634487

Manfra, M J; Baldwin, K W; Sergent, A M; West, K W; Molnar, R J; Caissie, J ^[1]

---

1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

We report on the transport properties of a two-dimensional electron gas (2DEG) confined in an AlGaN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy on a semi-insulating GaN template prepared by hydride vapor phase epitaxy with a threading dislocation density of {approx}5x10{sup 7} cm{sup -2}. Using a gated Hall bar structure, the electron density (n{sub e}) is varied from 4.1 to 9.1x10{sup 11} cm{sup -2}. At T=300 mK, the 2DEG displays a maximum mobility of 167 000 cm{sup 2}/V s at a sheet density of 9.1x10{sup 11} cm{sup -2}, corresponding to a mean-free-path of {approx}3 {mu}m. Shubnikov-de Haas oscillations, typically not observed at magnetic fields below 2 T in GaN, commence at B=0.6 T.

• OSTI ID: 20634487
• Journal Information: Applied Physics Letters, Vol. 85, Issue 22; Other Information: DOI: 10.1063/1.1824176; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
DISLOCATIONS
ELECTRON DENSITY
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HALL EFFECT
HETEROJUNCTIONS
HYDRIDES
MAGNETIC FIELDS
MEAN FREE PATH
MOLECULAR BEAM EPITAXY
OSCILLATIONS
PLASMA
SEMICONDUCTOR MATERIALS
SHUBNIKOV-DE HAAS EFFECT
VAPOR PHASE EPITAXY