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Title: Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics

Abstract

We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2 {mu}m) p-AlInGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E{sub V}+0.37{+-}0.05 eV) and two electron-emitting traps, E1 (E{sub C}-0.22{+-}0.04 eV) and E3 (E{sub C}-0.78{+-}0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2]
  1. Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688 (United States)
  2. Japan
Publication Date:
OSTI Identifier:
20634475
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 22; Other Information: DOI: 10.1063/1.1829136; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANNEALING; BEAM INJECTION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HOLES; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; SOLAR CELLS

Citation Formats

Khan, Aurangzeb, Marupaduga, S, Anandakrishnan, S S, Alam, M, Ekins-Daukes, N J, Lee, H S, Sasaki, T, Yamaguchi, M, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imazumi, M, Toyota Technological Institute, Nagoya, Sharp Corporation, Nara, and JAXA, Tsukuba. Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics. United States: N. p., 2004. Web. doi:10.1063/1.1829136.
Khan, Aurangzeb, Marupaduga, S, Anandakrishnan, S S, Alam, M, Ekins-Daukes, N J, Lee, H S, Sasaki, T, Yamaguchi, M, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imazumi, M, Toyota Technological Institute, Nagoya, Sharp Corporation, Nara, & JAXA, Tsukuba. Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics. United States. https://doi.org/10.1063/1.1829136
Khan, Aurangzeb, Marupaduga, S, Anandakrishnan, S S, Alam, M, Ekins-Daukes, N J, Lee, H S, Sasaki, T, Yamaguchi, M, Takamoto, T, Agui, T, Kamimura, K, Kaneiwa, M, Imazumi, M, Toyota Technological Institute, Nagoya, Sharp Corporation, Nara, and JAXA, Tsukuba. 2004. "Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics". United States. https://doi.org/10.1063/1.1829136.
@article{osti_20634475,
title = {Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics},
author = {Khan, Aurangzeb and Marupaduga, S and Anandakrishnan, S S and Alam, M and Ekins-Daukes, N J and Lee, H S and Sasaki, T and Yamaguchi, M and Takamoto, T and Agui, T and Kamimura, K and Kaneiwa, M and Imazumi, M and Toyota Technological Institute, Nagoya and Sharp Corporation, Nara and JAXA, Tsukuba},
abstractNote = {We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2 {mu}m) p-AlInGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E{sub V}+0.37{+-}0.05 eV) and two electron-emitting traps, E1 (E{sub C}-0.22{+-}0.04 eV) and E3 (E{sub C}-0.78{+-}0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.},
doi = {10.1063/1.1829136},
url = {https://www.osti.gov/biblio/20634475}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 85,
place = {United States},
year = {Mon Nov 29 00:00:00 EST 2004},
month = {Mon Nov 29 00:00:00 EST 2004}
}