Designable buried waveguides in sapphire by proton implantation
- Advanced Photonics Laboratory, Institute of Imaging and Applied Optics, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)
Buried and stacked planar as well as buried single and parallel channel waveguides are fabricated in sapphire by proton implantation. Good control of the implantation parameters provides excellent confinement of the guided light in each structure. Low propagation losses are obtained in fundamental-mode, buried channel waveguides without postimplantation annealing. Choice of the implantation parameters allows one to design mode shapes with different ellipticity and/or mode asymmetry in each orthogonal direction, thus demonstrating the versatility of the fabrication method. Horizontal and vertical parallelization is demonstrated for the design of one- or two-dimensional waveguide arrays in hard crystalline materials.
- OSTI ID:
- 20634471
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 22; Other Information: DOI: 10.1063/1.1827336; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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