Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes

Journal Article · Mon Nov 22 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1824179· OSTI ID:20634459

Baker, C; Gregory, I S; Tribe, W R; Bradley, I V; Evans, M J; Linfield, E H; Missous, M ^[1]

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1. Semiconductor Physics Group, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE (United Kingdom)

We have optimized low-temperature-grown In{sub 0.3}Ga{sub 0.7}As for use in ultrafast photoconductive devices. Using low temperature ex situ annealing techniques, we have produced a photoconductive material that is highly resistive ({approx}10{sup 4} {omega} cm), has sub-500 fs carrier trapping lifetimes, and is matched to 1.06 {mu}m laser excitation.

• OSTI ID: 20634459
• Journal Information: Applied Physics Letters, Vol. 85, Issue 21; Other Information: DOI: 10.1063/1.1824179; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARRIER LIFETIME
ELECTRONS
EXCITATION
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
LASERS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
SEMICONDUCTOR MATERIALS
TIME RESOLUTION
X-RAY SPECTRA