The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering
- Department of Physics, University of Oslo, N-0316 Oslo (Norway)
In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.
- OSTI ID:
- 20634408
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 19; Other Information: DOI: 10.1063/1.1819514; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AMORPHOUS STATE
ANNEALING
DEPOSITION
DOPED MATERIALS
ERBIUM IONS
GERMANIUM IONS
MAGNETRONS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICON OXIDES
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY