High tunability barium strontium titanate thin films for rf circuit applications
- Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)
Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have been obtained through optimization of growth conditions for maximum dielectric strength and zero-field permittivity in a parallel-plate capacitor structure. Using nominal target compositions of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3}, and Pt electrodes on c-plane sapphire substrates, adjustment of the O{sub 2} partial pressure during deposition was used to vary the excess Ti incorporation into the films, which influenced the low-field permittivity, loss tangent, and dielectric strength. By balancing the benefits of a high permittivity with dielectric strength and loss, we have produced films capable of sustaining short-duration fields greater than 4 MV/cm with over 13:1 (>90%) change in dielectric constant, and greater than 5:1 tunability in bias fields under 1 MV/cm.
- OSTI ID:
- 20634407
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 19; Other Information: DOI: 10.1063/1.1818724; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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