Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass
- Ovonyx, Inc., 8665 Sudley Rd., no. 263, Manassas, VA 20110 (United States)
- AFRL, 3550 Aberdeen Ave. SE, Bldg. 891, Kirtland AFB, NM 87117-5776 (United States)
- BAE SYSTEMS, 9300 Wellington Rd, Manassas, VA 20110 (United States)
We report on the progress of a recent addition to non-volatile solid state memory technologies suited for space and other ionizing radiation environments. We summarize the material and processing science behind the current generation of chalcogenide phase-change memories fabricated on CMOS structures. The chalcogenide material used for phase-change applications in rewritable optical storage (Ge2Sb2Te5) has been integrated with a radiation hardened CMOS process to produce 64kbit memory arrays. On selected arrays electrical testing demonstrated up to 100% memory cell yield, 100ns programming and read speeds, and write currents as low as 1mA/bit. Devices functioned normally from - 55 deg. C to 125 deg. C. Write/read endurance has been demonstrated to 1 x 108 before first bit failure. Radiation results show no degradation to the hardened CMOS or effects that can be attributed to the phase-change material. Future applications of the technology are discussed.
- OSTI ID:
- 20632872
- Journal Information:
- AIP Conference Proceedings, Vol. 699, Issue 1; Conference: STAIF 2004: 21. symposium on space nuclear power and propulsion: Human space exploration, space colonization, new frontiers and future concepts, Albuquerque, NM (United States), 8-11 Feb 2004; Other Information: DOI: 10.1063/1.1649626; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
Novel circuits for radiation hardened memories