Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy
- Microelectronics and Physical Sciences Laboratory, Process and Materials Characterization Laboratory, and Microelectronics and Physical Sciences Laboratory, Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284 (United States)
Hetero-epitaxy of single-crystal perovskite SrTiO{sub 3} on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO{sub 3} grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO{sub 3} thickness exceeded 20 A ring . Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO{sub 3} and GaAs and good crystallinity of the SrTiO{sub 3} film. An epitaxial relationship between SrTiO{sub 3} and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO{sub 3} on GaAs paves the way for integration of various functional perovskite oxides with GaAs.
- OSTI ID:
- 20632729
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 7; Other Information: DOI: 10.1063/1.1783016; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and dielectric properties of epitaxial SrTiO{sub 3} films grown directly on GaAs substrates by laser molecular beam epitaxy
Metastable tetragonal structure of Fe{sub 100-x}Ga{sub x} epitaxial thin films on ZnSe/GaAs(001) substrate