Preparation of thermally stable TiO{sub 2}-terminated SrTiO{sub 3}(100) substrate surfaces
- Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, 227-8581 (Japan)
We have examined the thermal stability of TiO{sub 2}-terminated SrTiO{sub 3}(100) surfaces obtained by buffered HF etching and widely used as substrates for oxide film growth. In situ coaxial impact-collision ion scattering spectroscopy was used to measure the composition of the terminating atomic layer at temperatures up to 1000 deg. C, simulating a broad range of thin-film growth conditions. The TiO{sub 2} termination of a nonannealed but HF-etched surface was found to start collapsing at temperatures as low as 300 deg. C regardless of atmosphere, showing thermal instability of the chemically cleaved surface. Here, we introduce an alternative way to prepare a stabilized SrTiO{sub 3} surface, which maintains a perfect TiO{sub 2} termination up to 700 deg. C, ideal for the growth of atomically sharp oxide heterointerfaces.
- OSTI ID:
- 20632667
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 2; Other Information: DOI: 10.1063/1.1771461; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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