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Title: Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1765736· OSTI ID:20632652
; ; ;  [1]
  1. National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

The ability to interconnect different nanostructures is crucial to nanocircuit fabrication efforts. A simple and versatile direct-write nanolithography technique for the fabrication of interconnects is presented. Decomposition of a metalorganic precursor gas by a focused electron beam resulted in the deposition of conductive platinum nanowires. The combination of in situ secondary electron imaging with deposition allows for the simultaneous identification and interconnection of nanoscale components. However, the deposition was not entirely localized to the electron beam raster area, as shown by secondary ion mass spectrometry measurements. The electrical impact of the metallic spread was quantified by measuring the leakage current between closely spaced wires. The origins of the spread and strategies for minimizing it are discussed. These results indicate that, while this direct-write methodology is a convenient one for rapid prototyping of nanocircuits, caution must be used to avoid unwanted decoration of nanostructures by metallic species.

OSTI ID:
20632652
Journal Information:
Applied Physics Letters, Vol. 85, Issue 1; Other Information: DOI: 10.1063/1.1765736; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English