Ion Implantation Angle Variation to Device Performance and the Control in Production
- Fab25, AMD, Mail Stop 608, 5204 E. Ben White Blvd., Austin, TX 78741 (United States)
- PCAL, Fab25, Mail Stop 613, 5204 E. Ben White Blvd., Austin, TX 78741 (United States)
- Advanced Process Control, Fab25, AMD, 5204 E. Ben White Blvd., Austin, TX 78741 (United States)
As the device features get smaller and aspect ratios of photoresist openings get steeper, shadowing effect has more impact on the performance of devices. Many of the traditional 7 deg. tilt implants have progressed to 0 deg. implants. But shadowing may still occur if the tilt angle deviates from normal direction. Some implants, such as halo implants, demand even more stringent angle control to reduce device performance variation. The demand for implant angle control and monitoring thus becomes more obvious and important. However, statistical process control (SPC) cannot be done on shadowing effect without special test structures. Channeling, on the other hand, provides good sensitivity in regard to implant angle changes. It is the authors' intention to introduce channeling implant in different channels to monitor the implant angle variation. The incoming <100> silicon wafers have a cut-angle spec of +/- 1.0 deg. This poses a difficulty if one wants to control the implant angle's accuracy within +/- 0.5 deg. Other measures have to be taken to ensure the consistency of test wafers and to have prompt diagnosis feedback when needed. This paper will discuss the effect of implant tilt angle on device parameters and how to control the angle variation in production. Correlations of implant tilt angle variation to ThermaWave, sheet resistance (Rs), Secondary Ion Mass Spectrometry (SIMS) and device parameters will be covered with certain implant conditions.
- OSTI ID:
- 20632648
- Journal Information:
- AIP Conference Proceedings, Vol. 680, Issue 1; Conference: 17. international conference on the application of accelerators in research and industry, Denton, TX (United States), 12-16 Nov 2002; Other Information: DOI: 10.1063/1.1619803; (c) 2003 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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