Temporal analysis of SEU in SOI/GAA SRAMs

Journal Article · Fri Dec 01 00:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489263· OSTI ID:203740

Francis, P; Colinge, J P; Berger, G ^[1]

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1. Catholic Univ. of Louvain, Louvain-la-Neuve (Belgium)

This paper analyzes the very strong SEU hardness of a 1k static random-access memory fabricated using the SOI/GAA technology, irradiated with a xenon ion beam at various angles of incidence. The memory has been shown to operate with a supply voltage as low as 2V while still presenting excellent SEU hardness. Since the different physical charge collection mechanisms are particularly slow in SOI devices, it is shown that collected and critical charges must be dynamically compared in order to determine the SEU threshold. A new approach is then proposed to evaluate the time-variable critical charge independently of the pulse shape generated by the incident ion, and a general analytical model is derived. Finally, predictions in good agreement with experimental data are obtained.

• OSTI ID: 203740
• Report Number(s): CONF-950716-; ISSN 0018-9499; TRN: 96:009706
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 42, Issue 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SEMICONDUCTOR STORAGE DEVICES
RADIATION HARDENING
EXPERIMENTAL DATA
ION BEAMS
ELECTRIC POTENTIAL
MATHEMATICAL MODELS
SILICON